svd2n65m/f/t/d_datasheet 2a, 650v n-channel mosfet description 2 3 1 1. gate 2. drain 3. source svd2n65m/f/t/d is an n-channel enhancement mode power mos field effect transistor which is produced using silan proprietary s-rin tm structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withst and high energy pulse in the avalanche and commutation mode. these devices are widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. to-251-3l to-252-2l features ? 2a, 650v,r ds(on)(typ.) =4.5 @v gs =10v ? low gate charge ? low c rss ? fast switching to-220-3l to-220f-3l ? improved dv/dt capability nomenclature ordering information part no. package marking material packing svd2n65m to-251-3l svd2n65m pb free tube svd2n65f to-220f-3l svd2n65f pb free tube svd2n65t to-220-3l svd2n65t pb free tube SVD2N65D to-252-2l SVD2N65D pb free tube SVD2N65Dtr to-252-2l SVD2N65D pb free tape & reel hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 1 of 9
svd2n65m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 2 of 9 absolute maximum ratings ( unless otherwise noted, t c =25 c) characteristics symbol svd2n65m/d svd2n65t svd2n65f unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v drain current i d 2.0 a 44 44 23 w power dissipation (t c =25 c) - derate above 25 c p d 0.22 0.22 0.18 w/ c single pulsed avalanche energy (note 1) e as 60 mj operation junction temperature t j -55 +150 c storage temperature tstg -55 +150 c thermal characteristics characteristics symbol SVD2N65D/m/t svd2n65f unit thermal resistance, junction-to-case r jc 2.87 5.5 c/w thermal resistance, junction-to-ambient r ja 110 62.5 c/w electrical characteristics ( unless otherwise noted, t c =25 c) characteristics symbol test conditions min. typ. max. unit drain -source breakdown voltage bv dss v gs =0v, i d =250a 650 -- -- v drain-source leakage current i dss v ds =650v, v gs =0v -- -- 1.0 a gate-source leakage current i gss v gs =30v, v ds =0v -- -- 100 na gate threshold voltage v gs(th) v gs = v ds , i d =250a 2.0 -- 4.0 v static drain- source on state resistance r ds(on) v gs =10v, i d =1.0a -- 4.5 5.6 input capacitance c iss -- 320 380 output capacitance c oss -- 30 45 reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz -- 3 5.6 pf turn-on delay time t d(on) -- 13 30 turn-on rise time t r -- 12 60 turn-off delay time t d(off) -- 73 100 turn-off fall time t f v dd =300v, i d =2.0a, r g =25 (note 2,3) -- 14.3 70 ns total gate charge q g -- 9.3 13 gate-source charge q gs -- 2.0 -- gate-drain charge q gd v ds =480v, i d =2.0a, v gs =10v (note 2,3) -- 3.3 -- nc
svd2n65m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 3 of 9 source-drain diode ratings and characteristics characteristics symbol test conditions min. typ. max. unit source current i s -- -- 2.0 pulsed source current i sm integral reverse p-n junction diode in the mosfet -- -- 8.0 a diode forward voltage v sd i s =2.0a,v gs =0v -- -- 1.4 v reverse recovery time t rr -- 230 -- ns reverse recovery charge q rr i s =2.0a,v gs =0v, d if /d t =100a/s -- 1.0 -- c notes: 1. l=30mh, i as =1.86, v dd =110v, starting t j =25 c; 2. pulse test: pulse width 300 s, duty cycle 2%; 3. essentially independent of operating temperature.
svd2n65m/f/t/d_datasheet typical characteristics hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 4 of 9
svd2n65m/f/t/d_datasheet typical test circuit v gs 10v charge 12v 50k 300nf same type as dut dut v gs hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 5 of 9 3ma v ds qg qgs qgd gate charge test circuit & waveform resistive switching test circuit & waveform v ds v gs r g r l v dd 10v v ds v gs 10% 90% td(on) t on tr td(off) t off t f unclamped inductive switchi ng test circuit & waveform v ds r g v dd 10v l tp i d b vdss i as v dd tp time v ds(t) i d(t) e as = 1 - 2 li as 2 b vdss b vdss v dd dut dut 200nf
svd2n65m/f/t/d_datasheet package outline to-220-3l unit: mm to-251-3l unit: mm hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 6 of 9
svd2n65m/f/t/d_datasheet package outline (continued) to-220f-3l(1) unit: mm to-220f-3l(2) unit: mm 4.50.3 3.00.3 10.00.5 hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 7 of 9 2.600.30 2.70.3 13.00.5 2.54 0.30 0.650.15 0.60.15 15.00.5 3.90.3 3.20.3 2.8 4.0
svd2n65m/f/t/d_datasheet package outline (continued) to-252-2l unit: mm disclaimer: ? silan reserves the right to make changes to the information herein for the improvement of the design and performance without further notice! customers should obtain the latest relevant information before placing orders and should verify that such information is complete and current. ? all semiconductor products malfunction or fail with some probability under special conditions. when using silan products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of such silan products could cause loss of body injury or damage to property. ? silan will supply the best possible product for customers! hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 8 of 9
svd2n65m/f/t/d_datasheet hangzhou silan microelectronics co.,ltd rev:1.1 2010.10.19 http://www.silan.com.cn page 9 of 9 attachment revision history date rev description page 2010.06.25 1.0 original 2010.10.19 1.1 modify the template of datasheet
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